The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

Jul. 24, 2020
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Joseph Gerard Schultz, Wheaton, IL (US);

Enver Krvavac, Kildeer, IL (US);

Olivier Lembeye, Saint Lys, FR;

Cedric Cassan, Muret, FR;

Kevin Kim, Gilbert, AZ (US);

Jeffrey Kevin Jones, Chandler, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01); H01L 23/66 (2006.01); H03F 3/213 (2006.01); H04B 1/04 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0288 (2013.01); H01L 23/66 (2013.01); H01L 29/2003 (2013.01); H03F 1/565 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H03F 3/24 (2013.01); H04B 1/0458 (2013.01); H01L 2223/665 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6644 (2013.01); H01L 2223/6655 (2013.01); H03F 2200/168 (2013.01); H03F 2200/18 (2013.01); H03F 2200/222 (2013.01); H03F 2200/225 (2013.01); H03F 2200/318 (2013.01); H03F 2200/387 (2013.01); H03F 2200/411 (2013.01); H03F 2200/42 (2013.01); H03F 2200/451 (2013.01); H03F 2200/54 (2013.01); H03F 2200/75 (2013.01); H03F 2203/21103 (2013.01); H03F 2203/21112 (2013.01);
Abstract

A multiple-stage amplifier includes a driver stage die and a final stage die. The driver stage die includes a first type of semiconductor substrate (e.g., a silicon substrate), a first transistor, and an integrated portion of an interstage impedance matching circuit. A control terminal of the first transistor is electrically coupled to an RF signal input terminal of the driver stage die, and the integrated portion of the interstage impedance matching circuit is electrically coupled between a current-carrying terminal of the first transistor and an RF signal output terminal of the driver stage die. The second die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a second transistor. A connection, which is a non-integrated portion of the interstage impedance matching circuit, is electrically coupled between the RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die.


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