The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

Nov. 21, 2019
Applicant:

Screen Holdings Co., Ltd., Kyoto, JP;

Inventors:

Yoshihide Nozaki, Kyoto, JP;

Tomohiro Ueno, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01L 21/66 (2006.01); G01N 21/55 (2014.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2686 (2013.01); G01N 21/55 (2013.01); H01L 21/324 (2013.01); H01L 21/67115 (2013.01); H01L 22/10 (2013.01); H01L 22/12 (2013.01);
Abstract

Multiple theoretical reflectances determined by simulation for a silicon substrate with thin films of multiple types and thicknesses formed thereon are registered in association with the types and the thicknesses in a database. A carrier storing semiconductor wafers in a lot is transported into a heat treatment apparatus. A reflectance of a semiconductor wafer is measured by applying light to a surface of the semiconductor wafer. The theoretical reflectance of the semiconductor wafer is calculated from the measured reflectance thereof. A theoretical reflectance closely resembling the theoretical reflectance of the semiconductor wafer is extracted from among the multiple theoretical reflectances registered in the database, whereby the type and thickness of the thin film formed on the surface of the semiconductor wafer are specified. Treatment conditions for the semiconductor wafer are determined based on the specified type and thickness of the thin film.


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