The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

Dec. 04, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Bo Qi, San Jose, CA (US);

Zeqing Shen, San Jose, CA (US);

Abhijit Mallick, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/033 (2006.01); C23C 16/28 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); C23C 16/28 (2013.01); C23C 16/50 (2013.01); H01L 21/0332 (2013.01);
Abstract

An exemplary method may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The method may also include forming a plasma within the processing region of the semiconductor processing chamber from the boron-containing precursor. The method may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The boron-containing material may include greater than 50% of boron. In some embodiments, the boron-containing material may include substantially all boron. In some embodiments, the method may further include delivering at least one of a germanium-containing precursor, an oxygen-containing precursor, a silicon-containing precursor, a phosphorus-containing precursor, a carbon-containing precursor, and/or a nitrogen-containing precursor to the processing region of the semiconductor processing chamber. The boron-containing material may further include at least one of germanium, oxygen, silicon, phosphorus, carbon, and/or nitrogen.


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