The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Jul. 22, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Vinayak Veer Vats, San Ramon, CA (US);
Byung Kook Ahn, Hwaseong-si, KR;
SeoYoung Lee, Hwaseong-si, KR;
Hang Yu, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Exemplary processing methods may include forming a first deposition plasma of a silicon-and-nitrogen-containing precursor. The methods may include depositing a first portion of a silicon nitride material on a semiconductor substrate with the first deposition plasma. A first treatment plasma of a helium-and-nitrogen-containing precursor may be formed to treat the first portion of the silicon nitride material with the first treatment plasma. A second deposition plasma may deposit a second portion of a silicon nitride material, and a second treatment plasma may treat the second portion of the silicon nitride material. A flow rate ratio of helium-to-nitrogen in the first treatment plasma may be lower than a He/Nflow rate ratio in the second treatment plasma. A first power level from a plasma power source that forms the first treatment plasma may be lower than a second power level that forms the second treatment plasma.