The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Oct. 19, 2018
Applicant:
Lg Chem, Ltd., Seoul, KR;
Inventors:
Eun Kyu Her, Daejeon, KR;
Chung Wan Kim, Daejeon, KR;
Song Ho Jang, Daejeon, KR;
Bu Gon Shin, Daejeon, KR;
Jeong Ho Park, Daejeon, KR;
Jung Hwan Yoon, Daejeon, KR;
So Young Choo, Daejeon, KR;
Assignee:
LG CHEM, LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/32 (2006.01); C03C 15/00 (2006.01); F21V 8/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32467 (2013.01); C03C 15/00 (2013.01); G02B 6/0018 (2013.01); G02B 6/0038 (2013.01); G02B 6/0065 (2013.01); H01J 2237/334 (2013.01);
Abstract
A plasma etching method using a Faraday cage, comprising: providing a Faraday cage having a mesh portion on an upper surface thereof in a plasma etching apparatus; providing a quartz substrate having a metal mask with an opening provided on one surface of the metal mask in the Faraday cage; and patterning the quartz substrate with plasma etching.