The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

Oct. 28, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Takamasa Suzuki, Hachioji, JP;

Yasushi Matsubara, Isehara, JP;

John D. Porter, Boise, ID (US);

Ki-Jun Nam, Allen, TX (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 1/26 (2006.01); G11C 11/4072 (2006.01); G11C 11/4074 (2006.01); G11C 7/06 (2006.01); G11C 5/06 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4072 (2013.01); G11C 5/06 (2013.01); G11C 7/065 (2013.01); G11C 11/4074 (2013.01); G11C 11/4091 (2013.01);
Abstract

A memory device is provided. The memory device includes a memory bank configured to store data in one or more memory cells. The memory device further includes a sense amplifier and associated circuitry configured to detect a first threshold representative of a first external voltage ramping down during a power off of the memory device, and one or more switches triggered via the sense amplifier and associated circuitry to provide for a power off sequence for the memory bank based on using a second external voltage ramping down during the power off of the memory device.


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