The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

Oct. 27, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shun Li Chen, Tainan, TW;

Li-Chun Tien, Tainan, TW;

Ting Yu Chen, Hsinchu, TW;

Wei-Ling Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/398 (2020.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); G06F 30/3947 (2020.01); G06F 30/3953 (2020.01); H01L 21/70 (2006.01); H01L 25/00 (2006.01); H03K 19/00 (2006.01); G03F 1/36 (2012.01);
U.S. Cl.
CPC ...
G06F 30/398 (2020.01); G03F 1/36 (2013.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); G06F 30/3947 (2020.01); G06F 30/3953 (2020.01); H01L 21/70 (2013.01); H01L 25/00 (2013.01); H03K 19/00 (2013.01);
Abstract

A semiconductor cell structure includes four transistors, two gate-strips, four pairs of conductive segments, and a plurality of horizontal routing lines. Each of the two gate-strips intersects a first-type active zone and a second-type active zone. A first conductive segment is configured to have a first supply voltage. A second conductive segment is configured to have a second supply voltage. The first gate-strip is conductively connected to the second conductive segment. Each of the horizontal routing lines intersects one or more conductive segments over one or more corresponding intersections while conductively isolated from the one or more conductive segments at each of the one or more corresponding intersections.


Find Patent Forward Citations

Chen, Shun. (2022). Engineering change order cell structure having always-on transistor (U.S. Patent No. 11275885). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11275885

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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