The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

Sep. 05, 2019
Applicant:

Clemson University, Clemson, SC (US);

Inventors:

Judson Ryckman, Clemson, SC (US);

Gabriel Allen, Clemson, SC (US);

William Frederick Delaney, Clemson, SC (US);

Tahmid Talukdar, Clemson, SC (US);

Assignee:

Clemson University, Clemson, SC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/77 (2006.01); G02B 6/122 (2006.01); G02B 6/136 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G01N 21/7746 (2013.01); G02B 6/1225 (2013.01); G02B 6/136 (2013.01); G01N 2021/7779 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12107 (2013.01); G02B 2006/12138 (2013.01);
Abstract

Devices and methods of providing a high-performance optical sensor disclose a sensor comprised of a porous material designed to have a multilayer rib-type or multilayer pillar-type waveguide geometry. The resulting porous nanomaterial multilayer-rib or multilayer-pillar waveguide design is optically capable of achieving ˜100% confinement factor while maintaining small mode area and single-mode character. Fabrication of the device is enabled by an inverse processing technique, wherein silicon wafers are first patterned and etched through well-established techniques, which allows porous nanomaterial synthesis (i.e., porous silicon anodization) either at the wafer-scale or at the chip-scale after wafer dicing. While ˜100% is an optimal target, typical devices per presently disclosed subject matter may operate with ˜98-99+%, while allowing for some design adjustments to be made if necessary, and still maintaining high sensitivity. i.e., >85-90% confinement suitable in some applications. In those instances, a primary benefit would still be use of the presently disclosed fabrication technology.


Find Patent Forward Citations

Loading…