The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Nov. 19, 2018
Applicant:

Orbotech Ltd., Yavne, IL;

Inventors:

Michael Zenou, Hashmonaim, IL;

Zvi Kotler, Tel Aviv, IL;

Assignee:

Orbotech Ltd., Yavne, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H05K 3/14 (2006.01); H01L 21/48 (2006.01); H01L 21/285 (2006.01); C23C 14/04 (2006.01); C23C 14/28 (2006.01); B23K 26/34 (2014.01); B23K 26/0622 (2014.01); B23K 26/12 (2014.01); B23K 26/00 (2014.01); B23K 26/08 (2014.01); B23K 103/00 (2006.01); B23K 101/40 (2006.01); H01L 31/05 (2014.01);
U.S. Cl.
CPC ...
H01L 31/022425 (2013.01); B23K 26/00 (2013.01); B23K 26/0006 (2013.01); B23K 26/0624 (2015.10); B23K 26/0861 (2013.01); B23K 26/123 (2013.01); B23K 26/1224 (2015.10); B23K 26/34 (2013.01); C23C 14/048 (2013.01); C23C 14/28 (2013.01); H01L 21/2855 (2013.01); H01L 21/4846 (2013.01); H05K 3/14 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08); H01L 31/05 (2013.01); H05K 2203/0528 (2013.01); H05K 2203/107 (2013.01); H05K 2203/128 (2013.01); Y02E 10/50 (2013.01);
Abstract

A method for metallization includes providing a transparent donor substrate () having deposited thereon a donor film () including a metal with a thickness less than 2 μm. The donor substrate is positioned in proximity to an acceptor substrate () including a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate. A train of laser pulses, having a pulse duration less than 2 ns, is directed to impinge on the donor substrate so as to cause droplets () of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace () in ohmic contact with the semiconductor material.


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