The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Aug. 31, 2020
Applicant:
National Chiao Tung University, Hsinchu, TW;
Inventors:
Edward Yi Chang, Hsinchu County, TW;
Mau-Chung Frank Chang, Taipei, TW;
Chieh-Hsi Chuang, Hsinchu, TW;
Jessie Lin, New Taipei, TW;
Assignee:
National Chiao Tung University, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/267 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7833 (2013.01); H01L 29/04 (2013.01); H01L 29/0653 (2013.01); H01L 29/0676 (2013.01); H01L 29/0847 (2013.01); H01L 29/267 (2013.01); H01L 29/66492 (2013.01); H01L 29/66522 (2013.01); H01L 29/66636 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02598 (2013.01); H01L 21/02639 (2013.01); H01L 21/30604 (2013.01); H01L 29/16 (2013.01); H01L 29/2003 (2013.01); H01L 29/66545 (2013.01);
Abstract
A silicon metal-oxide-semiconductor field effect transistor with a wide-bandgap III-V compound semiconductor drain and a method for fabricating the same are disclosed. The method fabricates a hundred nanometer-scale hole in a (100) silicon substrate to expose the (111) facet of the silicon substrate, which favors to use selective area growth to form lattice matched III-V materials with high quality.