The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Jun. 08, 2020
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Smic New Technology Research and Development (Shanghai) Corporation, Shanghai, CN;

Inventor:

Fei Zhou, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/311 (2006.01); H01L 21/265 (2006.01); H01L 29/786 (2006.01); H01L 29/775 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); B82Y 10/00 (2011.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66492 (2013.01); B82Y 10/00 (2013.01); H01L 21/26513 (2013.01); H01L 21/31144 (2013.01); H01L 29/0673 (2013.01); H01L 29/41725 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/7848 (2013.01); H01L 29/78696 (2013.01); H01L 29/165 (2013.01);
Abstract

Semiconductor structure is provided. The semiconductor structure includes at least one fin on a semiconductor substrate; at least one stacked channel layer formed on the at least one fin, each stacked channel layer having a sacrificial layer and a channel layer on the sacrificial layer; a dummy gate structure formed on the dummy gate structure; openings formed in the at least one stacked channel layer at both sides of the dummy gate structure; and a protective layer formed on sidewall surfaces of the sacrificial layer.


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Zhou, Fei. (2022). Semiconductor structure with protection layer (U.S. Patent No. 11271088). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11271088

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