The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Apr. 01, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Shi-You Liu, Kaohsiung, TW;
Tsai-Yu Wen, Tainan, TW;
Ching-I Li, Tainan, TW;
Ya-Yin Hsiao, Taipei, TW;
Chih-Chiang Wu, Tainan, TW;
Yu-Chun Liu, Miaoli County, TW;
Ti-Bin Chen, Tainan, TW;
Shao-Ping Chen, Kaohsiung, TW;
Huan-Chi Ma, Tainan, TW;
Chien-Wen Yu, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A p-type field effect transistor (pFET) includes a gate structure on a substrate, a channel region in the substrate directly under the gate structure, and a source/drain region adjacent to two sides of the gate structure. Preferably, the channel region includes a top portion and a bottom portion, in which a concentration of germanium in the bottom portion is lower than a concentration of germanium in the top portion and a depth of the top portion is equal to a depth of the bottom portion.