The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Oct. 21, 2020
Applicant:
Western Digital Technologies, Inc., San Jose, CA (US);
Inventors:
Assignee:
WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 45/00 (2006.01); H01L 43/12 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2427 (2013.01); H01L 27/224 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01L 45/06 (2013.01); H01L 45/1273 (2013.01); H01L 45/14 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01);
Abstract
A memory cell includes an ovonic threshold switch (OTS) selector containing a first electrode, a second electrode, an OTS located between the first electrode and the second electrode, and a current focusing layer containing discrete electrically conductive current focusing regions having a width of 30 nm or less located between the first electrode and the OTS, and a memory device located in electrical series with the OTS selector.