The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Jan. 14, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Chen Wu, Leuven, BE;

Peter Rabkin, Cupertino, CA (US);

Masaaki Higashitani, Cupertino, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/18 (2006.01); H01L 27/11556 (2017.01); H01L 27/11526 (2017.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01); H01L 24/89 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/80001 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

A semiconductor die includes a first pad-level dielectric layer embedding first bonding pads and located over a first substrate. Each of the first bonding pads is located within a respective pad cavity in the first pad-level dielectric layer. Each of the first bonding pads includes a first metallic liner containing a first metallic liner material and contacting a sidewall of the respective pad cavity, a first metallic fill material portion embedded in the first metallic liner, and a metallic electromigration barrier layer contacting the first metallic fill material portion and adjoined to the first metallic liner.


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