The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Dec. 14, 2018
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Amit Jain, Mountain View, CA (US);

Anne Le Gouil, Fremont, CA (US);

Yasushi Ishikawa, Pleasanton, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/04 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); H01L 21/0332 (2013.01); H01L 21/042 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01);
Abstract

Methods for etching features into carbon material using a metal-doped carbon-containing hard mask to reduce and eliminate redeposition of silicon-containing residues are provided herein. Methods involve depositing a metal-doped carbon-containing hard mask over the carbon material prior to etching the carbon material, patterning the metal-doped carbon-containing hard mask, and using the patterned metal-doped carbon-containing hard mask to etch the carbon material such that the use of a silicon-containing mask during etch of the carbon material is eliminated.


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