The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Sep. 27, 2017
Intel Corporation, Santa Clara, CA (US);
Patricio E. Romero, Portland, OR (US);
Scott B. Clendenning, Portland, OR (US);
Florian Gstrein, Portland, OR (US);
Cen Tan, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments herein describe techniques for a semiconductor device including a Ge substrate. A passivation layer may be formed above the Ge substrate, where the passivation layer may include one or more molecular monolayers with atoms of one or more group 15 elements or group 16 elements. In addition, a low-k interlayer may be above the passivation layer, and a high-k interlayer may be above the low-k interlayer. Furthermore, a metal contact may be above the high-k interlayer. Other embodiments may be described and/or claimed.