The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Apr. 24, 2019
Applicant:
Hansol Chemical Co., Ltd., Seoul, KR;
Inventors:
Jae-Seok An, Jeollabuk-do, KR;
Jong-Ryul Park, Incheon, KR;
Min-Hyuk Nim, Yongin-si, KR;
Jang-Hyeon Seok, Sejong-si, KR;
Jung Woo Park, Seoul, KR;
Assignee:
Hansol Chemical Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C07F 7/10 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C07F 7/10 (2013.01); C23C 16/402 (2013.01); C23C 16/45553 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02208 (2013.01); H01L 21/02271 (2013.01);
Abstract
The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.