The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Jan. 17, 2020
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Akira Yoshioka, Yokohama, JP;
Toru Sugiyama, Musashino, JP;
Masaaki Iwai, Yokohama, JP;
Naonori Hosokawa, Yokohama, JP;
Masaaki Onomura, Setagaya, JP;
Hung Hung, Kawasaki, JP;
Yasuhiro Isobe, Ota, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Abstract
A semiconductor device according to embodiments includes a normally-off transistor having a first electrode, a second electrode, and a first control electrode, a normally-on transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, a first element having a first end portion electrically connected to the first control electrode and a second end portion electrically connected to the first electrode, and the first element including a first capacitance component; and, a second element having a third end portion electrically connected to the first control electrode and the first end portion and a fourth end portion, and the second element including a second capacitance component, wherein, when a threshold voltage of the normally-off transistor is denoted by V, a maximum rated gate voltage of the normally-off transistor is denoted by V, a voltage of the fourth end portion is denoted by V, the first capacitance component is denoted by C, and the second capacitance component is denoted by C, V<(C/(C+C))V<V.