The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Sep. 21, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chia-Ling Chan, New Taipei, TW;
Yen-Chun Lin, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/22 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 23/532 (2006.01); H01L 29/423 (2006.01); H01L 21/768 (2006.01); H01L 21/308 (2006.01); H01L 21/8238 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/22 (2013.01); H01L 21/3086 (2013.01); H01L 21/324 (2013.01); H01L 21/76832 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 23/5329 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/42356 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7833 (2013.01); H01L 21/823814 (2013.01);
Abstract
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, forming a first spacer over the dummy gate structure, implanting a first dopant in the fin to form a doped region of the fin adjacent the first spacer, removing the doped region of the fin to form a first recess, wherein the first recess is self-aligned to the doped region, and epitaxially growing a source/drain region in the first recess.