The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2022

Filed:

Jan. 16, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chung-Hao Chu, Hsinchu, TW;

Chia-Chung Chen, Keelung, TW;

Shu Fang Fu, Hsinchu County, TW;

Chi-Feng Huang, Hsinchu County, TW;

Victor Chiang Liang, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/823431 (2013.01); H01L 29/785 (2013.01);
Abstract

The present disclosure provides a semiconductor device, including a substrate, a fin over the substrate, wherein the fin extends along a primary direction, a gate over the fin, the gate extends along the secondary direction orthogonal to the primary direction, a first conductive contact over the gate, and a conductive routing layer over the first conductive contact, wherein at least a portion of the fin is free from the coverage of a vertical projection of the conductive routing layer.


Find Patent Forward Citations

Loading…