The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Dec. 29, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventor:
Aryan Afzalian, Chastre, BE;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/775 (2006.01); H01L 29/66 (2006.01); H01L 29/205 (2006.01); H01L 29/201 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0638 (2013.01); H01L 29/1054 (2013.01); H01L 29/201 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/66522 (2013.01); H01L 29/66659 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/78 (2013.01); H01L 29/785 (2013.01); H01L 29/7827 (2013.01); H01L 29/66666 (2013.01);
Abstract
A transistor device includes a channel, a first source/drain region positioned on a first side of the channel, a second source/drain region positioned on a second side of the channel opposite the first side of the channel, and a tunnel barrier disposed between the channel and the first source/drain region, the tunnel barrier adapted to suppress band-to-band tunneling while the transistor device is in an off state.
Afzalian, Aryan. (2022). Hetero-tunnel field-effect transistor (tfet) having a tunnel barrier formed directly above channel region, directly below first source/drain region and adjacent gate electrode (U.S. Patent No. 11264452). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11264452
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile