The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Aug. 27, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hou-Ju Li, Hsinchu, TW;
Chur-Shyang Fu, Hsinchu, TW;
Chun-Sheng Liang, Changhua County, TW;
Jeng-Ya David Yeh, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a first active fin, a second active fin, a dummy fin and a first gate structure. The first and the second active fin are on the substrate and extend along a first direction. The dummy fin is disposed between the first active fin and the second active fin, and extends in the first direction. The dummy fin includes a plurality of layers, and each of the layers includes a material different from another layer. The first gate structure crosses over the dummy fin, the first and the second active fins.