The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2022

Filed:

Nov. 05, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Dheeraj Srinivasan, San Jose, CA (US);

Jeffrey M. Tsai, San Jose, CA (US);

Ali Mohammadzadeh, Mountain View, CA (US);

Terry M. Grunzke, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G06F 3/06 (2006.01); G11C 16/12 (2006.01); G11C 8/08 (2006.01); G11C 16/14 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G06F 3/06 (2013.01); G11C 8/08 (2013.01); G11C 16/12 (2013.01); G11C 16/14 (2013.01); G11C 16/30 (2013.01);
Abstract

An example apparatus includes a controller and a memory device. The memory device is configured to maintain, internal to the memory device, a status of a number of open blocks in the memory device. The status can include a programming operation being initiated in the respective number of open blocks. Responsive to receipt of, from the controller, a request to direct initiation of the programming operation to a word line, determine a group of memory cells associated with the word line that programs first relative to other groups of memory cells associated with the word line and maintain, included in the status of an open block, a voltage at which the group of memory cells is the first group to program.


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