The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Jun. 24, 2019
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Balaji Padmanabhan, Chandler, AZ (US);

Prasad Venkatraman, Gilbert, AZ (US);

Zia Hossain, Tempe, AZ (US);

Donald Zaremba, Phoenix, AZ (US);

Gordon M. Grivna, Mesa, AZ (US);

Alexander Young, Scottsdale, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/792 (2006.01); H01L 27/24 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42368 (2013.01); H01L 21/76224 (2013.01); H01L 27/2454 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/7926 (2013.01);
Abstract

Systems and methods of the disclosed embodiments include an electronic device that has a gate electrode for supplying a gate voltage, a source, a drain, and a channel doped to enable a current to flow from the drain to the source when a voltage is applied to the gate electrode. The electronic device may also include a gate insulator between the channel and the gate electrode. The gate insulator may include a first gate insulator section including a first thickness, and a second gate insulator section including a second thickness that is less than the first thickness. The gate insulator sections thereby improve the safe operating area by enabling the current to flow through the second gate insulator section at a lower voltage than the first gate insulator section.


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