The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Oct. 09, 2020
Infineon Technologies Ag, Neubiberg, DE;
Vera Van Treek, Unterhaching, DE;
Roman Baburske, Otterfing, DE;
Christian Jaeger, Munich, DE;
Christian Robert Mueller, Schweinfurt, DE;
Franz-Josef Niedernostheide, Hagen am Teutoburger Wald, DE;
Frank Dieter Pfirsch, Munich, DE;
Alexander Philippou, Munich, DE;
Judith Specht, Unterhaching, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor die includes a semiconductor body having first and second active portions. The first active portion includes first source regions. The second active portion includes second source regions. A gate structure extends from a first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. A first load pad and the first source regions are electrically connected. A second load pad and the second source regions are electrically connected. A gap laterally separates the first and second load pads. A lateral longitudinal extension of the gap is parallel to the first direction or deviates therefrom by not more than 60 degree. A connection structure electrically connects the first and second load pads. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.