The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Oct. 28, 2020
Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Tsmc Nanjing Company Limited, Nanjing, CN;

Inventors:

Huai-Xin Xian, Nanjing, CN;

Yang Zhou, Nanjing, CN;

Qing-Chao Meng, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/11 (2006.01); G06F 30/392 (2020.01); H03K 3/037 (2006.01); G11C 11/412 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); G06F 30/392 (2020.01); G11C 11/412 (2013.01); H03K 3/0372 (2013.01);
Abstract

A device includes a master latch, a slave latch and a retention latch coupled to each other. The retention latch includes first and second active areas, first and second gate structures. The first and second active areas extend in a first direction. The first gate structure extends in a second direction, the first gate structure including first and second portions that are separated from each other. The first portion is arranged over the first active area, and the second portion is arranged over the second active area. The second gate structure extends in the second direction, and is arranged over the first active area. The second gate structure is separated from the second active area and the first gate structure in a layout view. An end portion of the second active area is between the first gate structure and the second gate structure.


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