The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Feb. 18, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Harry-Hak-Lay Chuang, Hsinchu County, TW;

Wei-Cheng Wu, Hsinchu County, TW;

Ya-Chen Kao, Taoyuan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/823842 (2013.01); H01L 21/3212 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor device includes active gate structures and dummy gate electrodes. The active gate structures are above an active region of a substrate. The dummy gate electrodes are above the active region of the substrate. A number of the dummy gate electrodes is less than a number of the active gate structures. The active gate structures and the dummy gate electrodes have different materials, and a distance between adjacent one of the dummy gate electrodes and one of the active gate structures is substantially the same as a gate pitch of the active gate structures.


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