The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Dec. 03, 2020
United Microelectronics Corp., Hsinchu, TW;
Ting-Yao Lin, Hsinchu County, TW;
Chun Chiang, Hsinchu, TW;
Ping-Chen Chang, Pingtung County, TW;
Tien-Hao Tang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A semiconductor device of electrostatic discharge (ESD) protection is provided, including a deep N-type region, disposed in a substrate; a deep P-type region, disposed in the substrate; a first P-type well, disposed in the deep N-type region; a first N-type well, abutting to the first P-type well, disposed in the deep N-type region. Further, a second P-type well abutting to the first N-type well is disposed in the deep P-type region. A second N-type well abutting to the second P-type well is disposed in the deep P-type region. A side N-type well is disposed in the deep N-type region at an outer side of the first P-type well. A side P-type well is disposed in the deep P-type region at an outer side of the second N-type well.