The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Nov. 21, 2019
Applicant:
Stmicroelectronics Pte Ltd, Singapore, SG;
Inventor:
Tien Choy Loh, Singapore, SG;
Assignee:
STMICROELECTRONICS PTE LTD, Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02016 (2013.01); H01L 21/02019 (2013.01); H01L 21/02118 (2013.01); H01L 21/67069 (2013.01); H01L 21/67086 (2013.01);
Abstract
One or more embodiments are directed to methods of removing a sacrificial layer from semiconductor wafers during wafer processing. In at least one embodiment, the sacrificial layer is removed from a wafer during an Oplasma etch step. In one embodiment, the sacrificial layer is poly(p-phenylene-2, 6-benzobisoxazole) (PBO) or polyimide. The Oplasma etch step causes a residue to form on the wafer. The residue is removed by immersing the wafer a solution that is a mixture of the tetramethylammonium hydroxide (TMAH) and water.