The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Jun. 28, 2018
Fuji Electric Co., Ltd., Kanagawa, JP;
Hideaki Matsuyama, Hino, JP;
Shinya Takashima, Hachioji, JP;
Katsunori Ueno, Matsumoto, JP;
Ryo Tanaka, Hino, JP;
Masaharu Edo, Tokorozawa, JP;
Daisuke Mori, Hino, JP;
Hirotaka Suda, Hachioji, JP;
Hideaki Teranishi, Hachioji, JP;
Chizuru Inoue, Hino, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A gallium nitride based semiconductor device is provided, where when a thickness of a transition layer is defined as the followings, the thickness of the transition layer is less than 1.5 nm: (i) a distance between a depth position at which an atomic composition of nitrogen element constituting the gallium nitride based semiconductor layer is ½ relative to that at a position on the GaN based semiconductor layer side sufficiently away from the transition layer, and a depth position at which an atomic composition of a metal element is ½ of a value of a maximum if an atomic composition of the metal element constituting an insulating layer has the maximum, or a depth position at which an atomic composition of the metal element is ½ relative to that at a position on the insulating layer side sufficiently away from the transition layer if not having the maximum.