The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Apr. 08, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chun-Wen Cheng, Hsinchu County, TW;

Chia-Hua Chu, Hsinchu County, TW;

Fei-Lung Lai, New Taipei, TW;

Shiang-Chi Lin, Taoyuan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 49/02 (2006.01); B81B 7/00 (2006.01); G01L 9/00 (2006.01); B81C 1/00 (2006.01); G01N 27/12 (2006.01);
U.S. Cl.
CPC ...
B81B 7/007 (2013.01); B81C 1/0015 (2013.01); B81C 1/00158 (2013.01); B81C 1/00182 (2013.01); B81C 1/00301 (2013.01); G01L 9/0041 (2013.01); G01L 9/0042 (2013.01); G01L 9/0044 (2013.01); G01L 9/0045 (2013.01); G01L 9/0048 (2013.01); G01N 27/123 (2013.01); B81B 2201/0214 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/04 (2013.01); B81B 2207/012 (2013.01); B81B 2207/07 (2013.01); B81C 2203/035 (2013.01); B81C 2203/0792 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.


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