The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Feb. 25, 2020
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;

Inventors:

Yasuhiro Isobe, Ota, JP;

Hung Hung, Kawasaki, JP;

Masaaki Onomura, Setagaya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01);
Abstract

A semiconductor device of an embodiment includes: a first nitride semiconductor layer of a first conductive type; a second nitride semiconductor layer which is the first conductive type and is provided on the first nitride semiconductor layer; a third nitride semiconductor layer which is a second conductive type and is provided on the second nitride semiconductor layer; a fourth nitride semiconductor layer which is the first conductive type and is provided on the third nitride semiconductor layer; and a first electrode provided in a trench provided in the second nitride semiconductor layer, the third nitride semiconductor layer, and the fourth nitride semiconductor layer, via a first insulating film.


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