The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
May. 20, 2020
Qorvo Us, Inc., Greensboro, NC (US);
QORVO US, INC., Greensboro, NC (US);
Abstract
A high electron mobility transistor is disclosed. The high electron mobility transistor has a gallium nitride layer with a plurality of two-dimensional electron gas channels, wherein the gallium nitride layer is disposed over a substrate. A gate contact has a gate bus disposed over the gallium nitride layer. The gate bus includes a plurality of gate feet extending from the gate bus into the gallium nitride layer. Each gate foot of the plurality of gate feet has a trapezoid-shaped cross-section with a longer base and a shorter base in parallel with a longitudinal axis of the gate bus. A source contact is disposed over the gallium nitride layer, and a drain contact is disposed over the gallium nitride layer, wherein the source contact and the drain contact are spaced apart from the gate contact and each other.