The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Mar. 27, 2020
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Pei-Lun Jheng, Tainan, TW;
Chao-Sheng Cheng, Taichung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4933 (2013.01); H01L 21/82345 (2013.01); H01L 21/823443 (2013.01); H01L 27/088 (2013.01); H01L 29/42372 (2013.01); H01L 29/456 (2013.01);
Abstract
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a semiconductor substrate, a silicon-containing gate electrode, and at least two gate silicide strips. The silicon-containing gate electrode is on the semiconductor substrate. The at least two gate silicide strips are on an upper surface of the silicon-containing gate electrode.