The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Jun. 04, 2019
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventor:
Shin-Hung Li, Nantou County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/31111 (2013.01); H01L 21/823468 (2013.01); H01L 29/66477 (2013.01); H01L 29/78 (2013.01);
Abstract
A transistor and a method for forming the same are provided. The transistor includes a semiconductor substrate, a gate dielectric layer, a gate electrode, a spacer, and a source/drain. The semiconductor substrate includes a protrusive semiconductor portion protruded from a lower surface of the semiconductor substrate. The gate dielectric layer is on the semiconductor substrate. The gate electrode is on the gate dielectric layer. The spacer is on a sidewall of the gate electrode. An outer surface of the spacer has a concave portion. The source/drain is in the semiconductor substrate.