The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Jun. 13, 2016
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Yuan Sun, Singapore, SG;
Shyue Seng Jason Tan, Singapore, SG;
Assignee:
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/266 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823892 (2013.01); H01L 21/266 (2013.01); H01L 21/823418 (2013.01); H01L 21/823493 (2013.01); H01L 21/823857 (2013.01); H01L 29/42364 (2013.01); H01L 29/6659 (2013.01); H01L 29/66492 (2013.01); H01L 29/7833 (2013.01); H01L 21/823814 (2013.01); H01L 27/088 (2013.01); H01L 27/0922 (2013.01);
Abstract
An analog high gain transistor is disclosed. The formation of the analog high gain transistor is highly compatible with existing CMOS processes. The analog high gain transistor includes a double well, which includes the well implants of the low voltage (LV) and intermediate voltage (IV) transistors. In addition, the analog high gain transistor includes light doped extension regions of IV transistor and a thin gate dielectric of the LV transistor.