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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11251088 B1

PDFFull Text
Date of Patent:
Feb. 15, 2022

Filed:

Jun. 15, 2020

Semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Long-Jie Hong, Hsinchu, TW;

Chih-Lin Wang, Hsinchu County, TW;

Kang-Min Kuo, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Zandra V Smith

Assistant Examiner:

Andre C Stevenson

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823456 (2013.01); H01L 21/823412 (2013.01); H01L 27/088 (2013.01); H01L 29/0607 (2013.01); H01L 29/66545 (2013.01); H01L 29/66621 (2013.01); H01L 29/49 (2013.01); H01L 29/517 (2013.01);
Abstract

A semiconductor device includes an active area having source and drain regions and a channel region between the source and drain regions, an isolation structure surrounding the active area, and a gate structure over the channel region of the active area and over the isolation structure, wherein the isolation structure has a first portion under the gate structure and a second portion free from coverage by the gate structure, and a top of the first portion of the isolation structure is lower than a top of the second portion of the isolation structure.

Find Patent Forward Citations

Hong, Long-Jie. (2022). Semiconductor device (U.S. Patent No. 11251088). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11251088

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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