The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Oct. 31, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Martin Christopher Holland, Bertem, BE;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); C30B 29/08 (2006.01); H01L 29/78 (2006.01); C30B 19/10 (2006.01); C30B 19/12 (2006.01); C30B 29/06 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02653 (2013.01); C30B 19/106 (2013.01); C30B 19/12 (2013.01); C30B 29/06 (2013.01); C30B 29/08 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02625 (2013.01); H01L 21/02645 (2013.01); H01L 21/7624 (2013.01); H01L 29/0649 (2013.01); H01L 29/7838 (2013.01);
Abstract
A method of forming a semiconductor structure is provided. The method includes etching a trench in a template layer over a substrate, forming a seed structure over a bottom surface of the trench, forming a dielectric cap over the seed structure, and growing a single crystal semiconductor structure within the trench using a vapor liquid solid epitaxy growth process. The single crystal semiconductor structure is grown from a liquid-solid interface between the seed structure and the bottom surface of the trench.