The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Jan. 16, 2018
Applicant:
Hoya Corporation, Tokyo, JP;
Inventors:
Yohei Ikebe, Tokyo, JP;
Tsutomu Shoki, Tokyo, JP;
Assignee:
HOYA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/26 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/26 (2013.01); G03F 7/2004 (2013.01);
Abstract
Provided are a reflective mask blank and a reflective mask that are capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank has a multilayer reflective film and a phase shift film that causes a shift in the phase of EUV light on a substrate in that order, wherein the phase shift film comprises a single layer film or multilayer film of two or more layers and is made of a material comprising tantalum (Ta) and titanium (Ti).