The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Jul. 15, 2020
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Florian Brandl, Maxhütte-Haidhof, DE;

Robert Gruenberger, Nandlstadt, DE;

Wolfram Langheinrich, Dresden, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/053 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0048 (2013.01); B81B 2207/012 (2013.01); B81B 2207/07 (2013.01);
Abstract

A semiconductor device includes a first region; a second region that is peripheral to the first region; a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed in the first region at the first surface of the substrate; a back end of line (BEOL) stack disposed on the first surface of the semiconductor chip that extends laterally from the MEMS element, in the first region, into the second region; a first cavity formed in the BEOL stack that exposes the sensitive area of the stress-sensitive sensor, wherein the first cavity extends entirely through the BEOL stack over the first region thereby exposing a sensitive area of the stress-sensitive sensor; and at least one stress-decoupling trench laterally spaced from the stress-sensitive sensor and laterally spaced from the first cavity with a portion of the BEOL stack interposed between.


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