The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Nov. 15, 2018
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Chih-Chiang Lu, Hsinchu, TW;
Wei-Chih Peng, Hsinchu, TW;
Shiau-Huei San, Hsinchu, TW;
Min-Hsun Hsieh, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/06 (2010.01); H01L 33/22 (2010.01); H01L 33/28 (2010.01); H01L 33/30 (2010.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/28 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/387 (2013.01); H01L 33/40 (2013.01); H01L 33/405 (2013.01); H01L 33/504 (2013.01); H01L 33/56 (2013.01); H01L 33/60 (2013.01); H01L 33/44 (2013.01); H01L 33/508 (2013.01);
Abstract
A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.