The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Jul. 31, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Hsien-Wen Wan, Kaohsiung, TW;
Yi-Ting Cheng, Kaohsiung, TW;
Ming-Hwei Hong, Hsinchu County, TW;
Juei-Nai Kwo, Hsinchu, TW;
Bo-Yu Yang, New Taipei, TW;
Yu-Jie Hong, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A semiconductor device includes a semiconductive channel region, a semiconductive protection layer, a gate structure, and a pair of gate spacers. The semiconductive protection layer is on and in contact with the channel. The gate structure is above the semiconductive protection layer and includes gate dielectric layer and a gate electrode. The gate dielectric layer is above the semiconductive protection layer. The gate electrode is above the gate dielectric layer. The gate spacers are on opposite sides of the gate structure. The semiconductive protection layer extends from an inner sidewall of a first one of the pair of gate spacers to an inner sidewall of a second one of the pair of gate spacers.