The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
May. 05, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Tzu-Hsuan Yeh, Hsin-Chu, TW;
Chern-Yow Hsu, Chu-Bei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a bond pad layer onto a dielectric structure formed over a substrate. The dielectric structure surrounds a plurality of interconnect layers. A protective layer is formed onto the bond pad layer, and the bond pad layer and the protective layer are patterned to define a bond pad covered by the protective layer. One or more upper passivation layers are formed over the protective layer. A dry etching process is performed to form an opening extending through the one or more upper passivation layers to the protective layer. A wet etching process is performed to remove a part of the protective layer and expose an upper surface of the bond pad.