The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2022

Filed:

Nov. 11, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kuan-Wei Huang, Taoyuan, TW;

Cheng-Li Fan, New Taipei, TW;

Yu-Yu Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 21/033 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/76829 (2013.01); H01L 21/76841 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01);
Abstract

A method for reducing wiggling in a line includes forming a first patterning layer over a metal feature and depositing a first mask layer over the first patterning layer. The first mask layer is patterned to form a first set of one or more openings therein and then thinned. The pattern of the first mask layer is transferred to the first patterning layer to form a second set of one or more openings therein. The first patterning layer is etched to widen the second set of one or more openings. The first patterning layer may be comprised of silicon or an oxide material. The openings in the first patterning layer may be widened while a mask layer is over the first patterning layer.


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