The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
May. 30, 2018
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Hiroji Aga, Takasaki, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A method for manufacturing an SOI wafer by performing a sacrificial oxidation treatment and reducing a thickness of an SOI layer of the SOI wafer, in which: the SOI wafer on which the sacrificial oxidation treatment is performed has a film thickness distribution with a one-way sloping shape; a thermal oxidation in the sacrificial oxidation treatment is performed by combining a non-rotating oxidation and a rotating oxidation, using a vertical heat treatment furnace; whereby a thermal oxide film having an oxide film thickness distribution with a one-way sloping shape canceling the film thickness distribution with a one-way sloping shape of the SOI layer, is formed on a surface of the SOI layer; and by removing the formed thermal oxide film, an SOI wafer having an SOI layer whose film thickness distribution with a one-way sloping shape has been resolved is manufactured.