The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Jul. 30, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Xiang Li, Singapore, SG;
Ding-Lung Chen, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a dielectric structure, a first source/drain electrode, a second source/drain electrode, an oxide semiconductor layer, a gate dielectric layer, and a first gate electrode. The first source/drain electrode is disposed in the dielectric structure. The oxide semiconductor layer is disposed on the first source/drain electrode in a vertical direction. The second source/drain electrode disposed on the oxide semiconductor layer in the vertical direction. The gate dielectric layer is disposed on the dielectric structure and surrounds the oxide semiconductor layer in a horizontal direction. The gate dielectric layer includes a first portion and a second portion. The first portion is elongated in the horizontal direction. The second portion is disposed on the first portion and elongated in the vertical direction. The first gate electrode is disposed on the first portion of the gate dielectric layer.