The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Jan. 17, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Abstract
A semiconductor structure and fabrication method are provided. The method includes: providing a substrate with a first doped region and a second doped region; forming discrete first isolation structures in the second doped region; forming a third doped region in the second doped region between adjacent first isolation structures and under the first isolation structures; forming a gate structure; forming a source region in the first doped region; and forming a drain region in the second doped region. The first doped region includes first doping ions and the second doped region includes second doping ions with a conductivity type opposite to a conductivity type of the first doping ions. The third doped region includes third doping ions with a conductivity type opposite to the conductivity type of the second doping ions. A portion of the first isolation structure is located between the gate structure and the drain region.