The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Dec. 16, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Meng-Han Lin, Hsinchu, TW;

Chih-Ren Hsieh, Changhua County, TW;

Chih-Pin Huang, Hsinchu, TW;

Ching-Wen Chan, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3105 (2006.01); H01L 27/11521 (2017.01); H01L 21/308 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31056 (2013.01); H01L 21/3086 (2013.01); H01L 21/76283 (2013.01); H01L 27/11521 (2013.01);
Abstract

A method for manufacturing a semiconductor device is provided. The method includes forming a first isolation feature in a peripheral region of a substrate; recessing the cell region of the substrate after forming the first isolation feature; forming a second isolation feature in a cell region of the substrate after recessing the cell region of the substrate; forming a plurality of control gates over the cell region of the substrate; and forming a gate stack over the peripheral region of the substrate.


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