The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Nov. 18, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
You-Hua Chou, Hsinchu, TW;
Kuo-Sheng Chuang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/58 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 21/02 (2006.01); H01L 51/00 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); H01L 21/02115 (2013.01); H01L 21/02527 (2013.01); H01L 21/02606 (2013.01); H01L 21/76843 (2013.01); H01L 21/76876 (2013.01); H01L 21/76879 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5328 (2013.01); H01L 23/53276 (2013.01); H01L 23/585 (2013.01); H01L 51/0048 (2013.01); B82Y 30/00 (2013.01);
Abstract
A device includes a non-insulator structure, a first dielectric layer, and a first conductive feature. The first dielectric layer is over the non-insulator structure. The first conductive feature is in the first dielectric layer and includes carbon nano-tubes. The first catalyst layer is between the first conductive feature and the non-insulator structure. A top of the first catalyst layer is lower than a top of the first conductive feature.