The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Mar. 11, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Yutaka Motoyama, Nirasaki, JP;
Hiroyuki Hayashi, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02694 (2013.01); H01L 21/0243 (2013.01); H01L 21/02236 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02645 (2013.01); H01L 21/02669 (2013.01); H01L 21/3065 (2013.01); H01L 21/67109 (2013.01);
Abstract
A film forming method includes forming an amorphous semiconductor film on a recess, forming a first polycrystalline semiconductor film by performing heat treatment on the amorphous semiconductor film, and forming a second polycrystalline semiconductor film on the first polycrystalline semiconductor film formed by the heat treatment.